摘要
阐述CMP设备抛光头压力和抛光液中H_(2)O_(2)浓度对TSV工艺面铜去除速率和平坦化的影响。分析发现,粗抛压力3.0psi、精抛压力1.0psi、H_(2)O_(2)浓度2wt%时CMP加工效率高且通孔碟坑深度≤0.5μm。
This paper expounds the effects of polishing head pressure and H2O2 concentration in polishing slurry on copper removal rate and planarization of TSV process surface.It is found that the CMP processing efficiency is high and the hole depth is less than 0.5μm when the rapid polishing pressure is 3.0psi,the slow polishing pressure is 1.0psi and the H2O2 concentration is 2wt%.
作者
宋红伟
宋洁晶
秦龙
SONG Hongwei;SONG Jiejing;QIN Long(th Research Institute of CETC,Hebei 050057,China)
出处
《集成电路应用》
2024年第7期78-79,共2页
Application of IC
关键词
集成电路制造
TSV
CMP
去除速率
平坦化
integrated circuit manufacturing
TSV
CMP
removal rate
planarization
