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Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates

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摘要 As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).
出处 《Journal of Semiconductors》 EI CAS CSCD 2024年第9期4-6,共3页 半导体学报(英文版)
基金 supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600) the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009) the National Natural Science Foundation of China(Grant No.61927806)。

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