高均匀性1×128 SiC紫外雪崩光电二极管探测阵列

High uniformity 1×128 SiC ultraviolet avalanche photodiode detection array

主要研究了SiC雪崩光电二极管(APD)阵列对微弱紫外光的探测均匀性问题,设计并制备了1×128 SiC APD探测阵列,通过表征各像素点的电流-电压曲线,提取出APD阵列的击穿电压波动在±0.1 V;通过被动淬灭电路表征各像素点的微弱紫外光探测能力,提取出APD阵列的暗计数率波动在±0.5 Hz/μm^(2),单光子探测效率波动在±0.4%,良率达到91%,结果表明本工作设计的SiC APD探测阵列能够为微弱紫外光成像技术提供可行的技术方案。

Here we designed and prepared a 1×128 linear array of SiC avalanche photodiode(APD),which was then further assessed for its detection uniformity of weak ultraviolet light.The results show that the breakdown voltage extracted from current-voltage curve fluctuates only±0.1 V.To characterize its detection behaviors,we used a specific passive quenching circuit to reveal its photon-level detection features.The detection behaviors show high uniformity with small fluctuation of dark count rate of±0.5 Hz/μm^(2) and single photon detection efficiency of±0.4%.These results demonstrate that prepared SiC APD array structure can provide a feasible solution for ultraweak ultraviolet imaging technology.