聚焦离子束工艺参数对单像素线刻蚀的影响

Effect of Process Parameters of Focused Ion Beam on Single Pixel Line Etching

单像素线刻蚀是制备微纳米器件中的基本单元及加工其他复杂结构的基础,对聚焦离子束(FIB)加工具有重要的意义。通过改变离子束流的大小、驻留时间、扫描步长百分比及离子剂量等参数,对硅表面进行单像素线刻蚀的研究。结果表明,在聚焦离子束加工中,离子剂量与刻蚀线条宽度和深度之间呈正相关,与宽深比之间呈负相关;离子束流大小的变化对刻蚀深度影响不明显,但刻蚀宽度和宽深比随离子束流的增大而增大。此外,随着离子束流驻留时间增加,刻蚀宽度增大而深度减小;随着扫描步长百分比的增大,刻蚀深度增大,刻蚀宽度减小,分析结果表明这些变化与加工过程中再沉积作用有关。本研究成果为后续复杂图形的精密加工提供了重要参考依据。

Single pixel line etching is important for focused ion beam(FIB)processing as a basis for preparing basic units in micro-and nano-devices and processing other complex structures.Single pixel line etching of silicon surfaces was investigated by varying parameters such as the ion beam,dwell time,scanning step length percentage and ion dose.The results show that in focused ion beam processing,the ion dose exhibits a positive correlation with the width and depth of the etched line and a negative correlation with the width-depth ratio.The variation of the ion beam does not have a significant effect on the etching depth,but the etching width and the width-depth ratio increase with the increase of the ion beam.In addition,with the increase of the dwell time of the ion beam,the etching width increases and the etching depth decreases.With the increase of the scanning step length percentage,the etching depth increases and the etching width decreases.And the analysis results show that these changes are related to the redeposition effect during the processing.The research results provide important reference for the subsequent precision processing of complex graphics.