摘要
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
基金
fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055)
National Key Research and Development program of China(No.2021YFA1200700)
Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100)
the Fundamental Research Funds for the Central Universities.
