半导体激光对药物性牙龈增生和牙周基础治疗总疗效及改善牙龈增生效果分析

Analysis of the Total Efficacy of Semiconductor Laser on Drug-Induced Gingival Hyperplasia and Periodontal Basic Treatment and the Improvement of Gingival Hyperplasia

目的:研究药物性牙龈增生使用半导体激光、牙周基础治疗的总疗效及改善牙龈增生效果。方法:选择60例药物性牙龈增生患者进行数据研究,抽签分组,每组30例,研究组使用半导体激光、牙周基础治疗,对照组使用牙周基础治疗,对比组间差异。结果:比较对照组,研究组不同时期的牙龈增生指数均明显更低,在治疗后,明显下降SBI、PD、PLI,总有效率明显更高,P<0.05;对比两组治疗前的SBI、PD、PLI,P>0.05。结论:药物性牙龈增生使用半导体激光、牙周基础治疗的总疗效及改善牙龈增生效果均理想。

Objective:To study the total efficacy of semiconductor laser and periodontal basic treatment on drug-induced gingival hyperplasia and the improvement of gingival hyperplasia.Methods:60 patients with drug-induced gingival hyperplasia were selected for data study and divided by lot into 30 cases in each group.The study group received semiconductor laser and periodontal basic treatment,while the control group received periodontal basic treatment,and the differences between the groups were compared.Results:Compared with the control group,the gingival hyperplasia index of the study group was significantly lower at different periods.After treatment,SBI,PD,PLI were significantly decreased,and the total effective rate was significantly higher,P<0.05.Compared with the SBI,PD,PLI before treatment,P>0.05.Conclusion:The total efficacy of semiconductor laser and periodontal basic treatment on drug-induced gingival hyperplasia and the improvement of gingival hyperplasia are ideal.