GaN中子探测器研究进展

Research Progress of GaN Neutron Detector

GaN半导体具有禁带宽度大、耐高温、耐辐射、击穿电压高、饱和电子迁移率高等优点,在核辐射监测、深空探测、核事故应急等领域有重要的应用潜力。本文阐述了GaN半导体中子探测器的基本性质和国内外研究进展,从探测器结构、材料缺陷类型、中子转换材料等角度重点介绍了GaN中子探测器的发展现状,总结了制约GaN中子探测器应用的关键问题,展望了GaN半导体在中子探测领域的发展趋势。

GaN semiconductors have some advantages such as wide bandgap,high temperature resistance,radiation resistance,high breakdown voltage,and high saturated electron mobility.These properties make GaN semiconductors promising for applications in nuclear radiation detection,deep space exploration,and nuclear accident response.This paper provided an overview of the basic properties of GaN semiconductor neutron detectors,the current research landscape both domestically and internationally,and the development of GaN neutron detectors from aspects such as detector structure,material defects,and neutron conversion materials.The key challenges hindering the widespread use of GaN neutron radiation detectors were identified,and the future prospects of GaN semiconductors in neutron detection were discussed.