蝌蚪型POSS嵌段共聚物多孔膜制备及其疏水性能

Preparation and its hydrophobic property of tadpole POSS block copolymer porous film

针对传统疏水整理方法存在高温处理、对设备要求高、织物固有属性降低等缺点,以蝌蚪型倍半硅氧烷(POSS)嵌段共聚物为成膜材料,通过呼吸图案法制备有序排列的多孔膜。以硅片为基底,优化溶剂种类、共聚物质量浓度、成膜温度及成膜时间,得到孔径均匀的多孔膜,对其表面疏水性能进行测试。以棉织物为基底,优化共聚物质量浓度制备多孔膜,测试其表面疏水性能。结果表明:蝌蚪型POSS嵌段共聚物在硅片表面成膜最佳工艺条件为溶剂三氯甲烷,共聚物质量浓度30 mg/mL,温度80℃,时间60 s,在此工艺条件下多孔膜水接触角为117.8°,具有疏水性能;以棉织物为基底,通过呼吸图案法在棉织物表面制备多孔结构,共聚物质量浓度为60 mg/mL时,其表面水接触角为154.0°,孔的结构规整性最好且达到超疏水;在相同质量浓度条件下水接触角较浸渍-烘干法高15°左右。

Aiming at the disadvantages of traditional hydrophobic modified methods,such as higher temperature treatment,higher equipment requirements,and lower inherent properties of the fabric,the tadpole type polyhedral oligomeric silsesquioxane(POSS)block copolymer was used as the film forming material,and the orderly porous films were prepared by breath figure method.The porous film with uniform pore size was prepared base on silicon wafer by optimizing the solvent type,copolymer concentration,film forming temperature and film forming time,then its surface hydrophobic property was tested.Using cotton fabric as substrate,porous film was prepared by optimizing copolymer concentration,and its surface hydrophobic property was tested.The results showed that the optimum conditions for film formation of tadpole type block copolymer on the surface of silicon wafer were as follows:chloroform as solvent,30 mg/mL copolymer concentration,80℃temperature and 60 s time.Under the conditions,the water contact angle of porous film was 117.8°,and the hydrophobic property was achieved.The porous structures were prepared with cotton fabric as basis through breath figure method.When the copolymer concentration was 60 mg/mL,the water contact angle was 154.0°.The structure of pores was uniform with superhydrophobic property.Compared with the dipping-drying method,the water contact angle was about 15°higher at the same concentration.