基于45 nm CMOS SOI工艺的毫米波双频段低相噪压控振荡器设计

Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process

本文基于45 nm互补金属氧化物半导体绝缘体上硅工艺(Complementary Metal Oxide Semiconductor Silicon On Insulator,CMOS SOI)设计了一款支持5G毫米波24.25~27.5 GHz和37~43.5 GHz双频段的低相位噪声压控振荡器(Voltage Controlled Oscillator,VCO).基于CMOS SOI工艺良好的晶体管开关特性,结合开关电容阵列及开关电感方案,提高宽带调谐电容、电感Q值,扩展VCO工作频段,降低相位噪声.同时,输出匹配网络也采用开关电容切换方式,实现了5G毫米波双频段良好阻抗匹配及稳定功率输出.流片测试结果表明该VCO可以完整覆盖5G毫米波双频段24.25~27.5 GHz和37~43.5 GHz,低频段输出功率-4.8~0 dBm,高频段输出功率-6.4~-2.3 dBm.在24.482 GHz载频,1 MHz频偏处的相位噪声为-105.1 dBc/Hz;在43.308 GHz载频,1 MHz频偏处的相位噪声为-95.3 dBc/Hz.VCO核心直流功耗15.3~18.5 mW,电路核心面积为0.198 mm^(2).低频段(高频段)的FoM(Figure of Merit)及FoMT优值分别达到-181.3 dBc/Hz(-175.4 dBc/Hz)、-194.3 dBc/Hz(-188.3 dBc/Hz).

This paper presents the design of a millimeter-wave dual-band low phase noise voltage-controlled-oscilla⁃tor in 45 nm CMOS SOI(Complementary Metal Oxide Semiconductor Silicon On Insulator)process,which covers bands of 24.25~27.5 GHz and 37~43.5 GHz for 5G millimeter-wave communications.Based on the transistor’s high performance as the RF switch in SOI process,the switched cap-bank and switched inductor topology are proposed in this paper,to enhance the quality factor Q for the wide-band tuning inductance and capacitance,increase the VCO(Voltage Controlled Oscillator)operating bandwidth,and lower the phase noise performance.Meanwhile,the switched capacitor is also adopted in the out⁃put matching network for good matching and stable output power in dual-bands.Measured results show that the designed VCO covers the bands of 24.25~27.5 GHz and 37~43.5 GHz for 5G millimeter-wave communication standards as in WRC-19,with output power of-4.8~0 dBm in low band and-6.4~-2.3 dBm in high band.The measured phase noise is-105.1 dBc/Hz@1 MHz offset for the 24.482 GHz carrier,and-95.3 dBc/Hz@1 MHz offset for the 43.308 GHz carrier.The DC power consumption for the core circuit is 15.3~18.5 mW,and the core area is 0.198 mm2.The corresponding FoM(Figure of Merit)and FoMT for low(high)band is-181.3 dBc/Hz(-175.4 dBc/Hz),and-194.3 dBc/Hz(-188.3 dBc/Hz),respectively.