面向集成电路先进制程的二维信息材料与器件

Two-Dimensional Information Materials and Devices for Advanced Integrated Circuits

随着集成电路技术的发展至3 nm节点,摩尔定律接近其物理极限,传统芯片制程面临材料到器件的理论和技术瓶颈。二维信息材料凭借原子层厚度、低功耗等特性被产业界认为是1 nm及以下节点的核心材料,将助力芯片制程延续摩尔定律以及平面到三维的发展,与我国集成电路先进制程长期规划紧密相关。基于国家自然科学基金委员会第343期双清论坛,本文从材料—器件—异质集成多层次回顾了二维信息材料与器件的发展历史,总结了领域内所面临挑战,凝炼了未来5~10年的重大关键科学以及亟需布局的研究方向,进一步提出顶层设计的前沿研究方向和科学基金资助战略。

With the development of integrated circuit technology to the 3 nm node,Moores law approaches its physical limits,and the chip process faces the theoretical bottlenecks including materials and devices.Two-dimensional information materials by virtue of atomic layer thickness,low power consumption and other advantages are considered to be the core materials of 1 nm and below nodes and to help the chip process to advance Moores law continually,being closely related to the long-term planning of advanced manufacture process of integrated circuits in China.Based on the discussions and the proposals from the 343rd Shuangqing Forum,this paper reviews the development history of two-dimensional information materials and devices from the perspective of material-device-heterogeneous integrations.Furthermore,this paper also gives a discussion about the major key issues and challenges in this field in the next 5~10 years as well as the potential frontier research directions recommended to National Natural Science Foundation of China for funding.