摘要
作为常见的高迁移率直接带隙半导体,砷化镓(gallium arsenide,GaAs)的光电响应性质一直是学界研究的焦点.针对特殊结构半导体器件的光电响应方式理论上研究一般采用宏观有限元方法结合半经典理论的模拟.随着器件尺寸的小型化,微观结构的重要性更加凸显.通过非平衡态格林函数结合密度泛函理论方法(non-equilibrium Green’s function method with density functional theory,NEDF-DFT)首次在原子尺度下计算了砷化镓纳米结在化学掺杂和栅极下的光响应,定性分析了材料掺杂浓度对光响应的影响.本工作对于半导体器件光电性质的模拟分析方法的拓展和器件性能的定性理解具有比较重要的意义.
As a direct bandgap semiconductor with high electron mobility,GaAs and its photoelectric response have been the focus of academic researches.Macroscopicfinite element methods combined with semi-classical theory are normally used to simulate the photoelectric response of semiconductor devices with specific structures.With the miniaturization of devices,the microscopic structural features become more important.In this paper,the non-equilibrium Green’s function method with density functional theory(NEGF-DFT)wasfirstly adopted to calculate the light response of GaAs nanojunctions under chemical doping and gate voltage,and qualitative analysis of the doping density on light response is achieved.This work casts light on thefirst-principle analysis of photoelectric response of semiconductor devices and will be meaningful to the future researches in thisfield.
作者
曹睿
陈竞哲
CAO Rui;CHEN Jingzhe(College of Sciences,Shanghai University,Shanghai 200444,China)
出处
《上海大学学报(自然科学版)》
CAS
CSCD
北大核心
2024年第4期751-757,共7页
Journal of Shanghai University:Natural Science Edition
基金
国家自然科学基金资助项目(11404206)。
关键词
砷化镓
纳米结
非平衡态格林函数
化学掺杂
栅极电压
GaAs
nanojunction
non-equilibrium Green’s function
chemical doping
gate voltage