C波段2000 W氮化镓线性固态功放研制

Development of C-band 2000 W GaN linear solid-state power amplifier

介绍了一种C波段2000 W氮化镓高功率线性固态功放的工程实现。使用32片GaN功率管芯芯片,采用微带Gysel功分器与波导功分/合成网络相结合的方式进行功率合成,功放在900 MHz的工作频带内连续波饱和输出功率大于2000 W,最大输出功率2290 W。采用射频预失真线性化技术优化氮化镓功放线性度,功放三阶互调指标改善幅度大于4 dB,优于-29 dBc。选择带热管的翅片散热器的强制风冷方案,提高散热器的换热效率,散热性能良好。功放配置了完善的控保功能,可靠性及实用性满足工程使用要求。功放插箱和电源模块采用热插拔设计,便于快速维修,适用于测控、通信、广电等领域的微波发射系统。

This paper introduces an engineering realization of a C-band 2000 W GaN high linear solid-state power amplifier.Using 32 GaN power transistor chips and using microstrip Gysel power dividers and waveguide power dividers/synthesis networks for power synthesis,the power amplifier has a continuous wave saturated output power greater than 2000 watts and a maximum output power of 2290 watts in the operating frequency band of 900 MHz.Radio frequency predistortion technology is applied,and the improvement of the third-order intermodulation is up to 4 dB,which is better than-29 dBc.A forced air cooling scheme is chosen for finned radiators with heat pipes to improve the heat transfer efficiency,and the heat dissipation performance is excellent.The power amplifier is equipped with comprehensive control and protection functions,the reliability and practicality of which meets the requirements of engineering use.The socket and power module adopt a hot swappable design,which is convenient for quick maintenance and suitable for microwave transmission system in fields such as measurement and control,communication and broadcasting.