摘要
利用碳化硅场效应管(SiC MOSFET)的特性,结合MC33262功率因数控制芯片,设计一款具有负压关断作用且输出400 V、250 W,效率为97%左右的功率因数校正(PFC)电路.该电路能够降低MOS管的开关损耗,提高电源功率因数,抑制电压与电流谐波系数,提升电源利用率以及稳定性.
A power factor correction(PFC)circuit with a negative voltage shutdown function and an output of 400 V,250 W and efficiency of about 97%is designed,By using the characteristics of silicon carbide field-effect tubes(SiC MOSFET),and the MC33262 power factor control chip.The circuit reduces the turn-off lossse of the MOS tube,improves the power factor of the power supply,Suppresses voltage and current harmonic coefficients,to improve power utilization and stability.
作者
姚广平
张炎
王振辉
潘玉灼
YAO Guangping;ZHANG Yan;WANG Zhenhui;PAN Yuzhuo(School of Physic and Information Engineering,Quanzhou Normal University,Quanzhou 362000,China)
出处
《商丘师范学院学报》
CAS
2024年第9期13-16,共4页
Journal of Shangqiu Normal University
基金
福建省科技厅引导性项目(2021H0051)
泉州市科技局人才项目(2020C029R)。
