基于TSV技术的硅基高压电容器

Silicon-based High-voltage Capacitor Based on TSV Technology

以微机电系统(MEMS)工艺设计并制作了一种基于TSV技术的高压电容器。给出了电容器的结构形式,理论分析计算了电容器的容值参数,设计得到了容值为2 nF,芯片尺寸为2 mm×2 mm×0.3 mm的硅基电容器。提出一套MEMS工艺的硅基电容器的制作流程,实现了电容器的工艺制作及测试。测试结果表明,获得的高压电容器的容值与设计值基本一致,击穿电压可以达到280 V。硅基高压电容器具有电容密度高、一致性好、易生产的特点,适合高压电子系统的应用发展需求。

A high-voltage capacitor based on TSV technology is designed and fabricated by MEMS technology.The structural form of the capacitor is presented,and the capacitance parameters of the capacitor are theoretically analyzed and calculated.A silicon-based capacitor with a capacitance of 2 nF and a chip size of 2 mm x 2 mm x 0.3 mm is designed.A production process for silicon-based capacitors based on MEMS technology is provided,and the manufacturing and testing of capacitors are achieved.The test results show that the capacitance value of the obtained high-voltage capacitor is basically consistent with the design value,and the breakdown voltage can reach 280 V.Silicon-based high-voltage capacitors have the characteristics of high capacitance density,good consistency,and easy production,which are suitable for the application and development needs of high-voltage electronic systems.