平面栅极碳化硅垂直MOSFET功率器件栅氧可靠性筛选研究进展综述

Review on the research progress of oxide reliability screening for planar-gate silicon carbide vertical power MOSFET devices

随着碳化硅金属氧化物半导体场效应晶体管(MOSFET)功率器件的广泛应用,其面临的栅极可靠性问题亟待解决,本文回顾了平面栅极碳化硅垂直MOSFET功率器件的栅极结构以及目前业界常用的栅氧筛选方法,介绍了栅氧早期失效物理模型并且讨论了这些物理模型与筛选方法之间的适用性。

With the widespread application of silicon carbide(SiC)MOSFET power devices,there is an urgent need to solve the problem of gate reliability.This paper reviews the gate structure of planar-gate silicon carbide vertical MOSFET power devices and the commonly used gate oxide screening methods,introduces the physical model of early gate-oxide failure,and discusses the applicability between these physical models and screening methods.