有机薄膜晶体管陷阱态密度检测研究进展

Progress in the Detection of Trap Density of States in Organic Thin Film Transistors

近年来,有机薄膜晶体管取得了重大进步,推动了微电子电路、有机发光显示器、有机生物电子和有机光电探测器等技术的发展与应用。多晶或非晶的有机半导体易产生大量缺陷,器件的制备工艺也会带来缺陷,导致带隙中的局域陷阱态捕获电荷载流子。因此,陷阱态将严重影响有机薄膜晶体管中载流子的传输。综述了几种测量和表征有机半导体器件陷阱态密度的方法和技术,不同的方法基于不同的近似和假设,采用不同的测量原理,涵盖不同的能量范围。对比分析了几种检测方法的优势和局限性,对有机薄膜陷阱态的测量提出了具有指导性的意见。

Recently,significant progress has been made in the organic thin film transistor field,which has prompted the development and application of microelectronic circuits,organic lightemitting displays,organic bioelectronics,and organic optoelectronic detectors.However,polycrystalline or amorphous organic semiconductors are prone to many defects,and the device fabrication process introduces defects,resulting in localized trap states in the band gap to trap charge carriers.Consequently,the trap states affect the carrier transport in organic thin film transistors considerably.Thus,in this study,several methods to detect and characterize the trap density of the states in organic semiconductor devices are reviewed.Different methods utilize different approximations and assumptions,employ different measurement principles,and cover different energy ranges.Therefore,the advantages and limitations of several detection methods are compared and analyzed,and guiding opinions are presented to facilitate effective measurement of the trap states in organic thin films.