SiC量子点颗粒间距估算及其对光学性能的影响

Estimation of Particle Spacing in SiC Quantum Dots and Its Impact on Optical Properties

以氢氟酸、硝酸和分析纯硫酸组成的混合液为腐蚀剂,通过简单、过程可控的化学腐蚀制备出光学性能优异的碳化硅量子。利用扫描电镜分析检测碳化硅量子点在腐蚀进程中微观形貌的演变过程,通过Auto-CAD计算机辅助设计建立了碳化硅量子点颗粒间距的数学模型,估算了量子点水相溶液在不同稀释程度下颗粒间平均间距。结果表明,随着碳化硅量子点颗粒平均间距的单调增加,其光致发光强度呈现先增后减的变化规律,且光致发光相对强度峰值出现在颗粒间距为26 nm处,该变化规律源自淬灭效应、光吸收与荧光竞争效应的综合作用。

SiC quantum dots with excellent optical properties were prepared through a simple and controllable chemical corrosion preparation process using a mixture solution of hydrofluoric acid,nitric acid,and analytically pure sulfuric acid as etchants.Scanning electron microscopy was used to analyze and detect the evolution of the micromorphology of SiC quantum dots during the corrosion process.A mathematical model for the particle spacing of SiC quantum dots was established through Auto-CAD computer-aided design,estimating the average particle spacing between quantum dots in aqueous solutions at different dilution levels.The results show that as the average spacing of SiC quantum dots increases monotonically,their photoluminescence intensity shows a pattern of initial increase followed by decrease.The peak relative intensity of photoluminescence occurs at a particle spacing of 26 nm.This change law originates from the comprehensive effects of the quenching effect,light absorption,and fluorescence competition effect.