电网用5200V压接式逆导IGBT模块

5200 V Press-Pack Reverse Conducting IGBT Module for Power Grid

为了进一步增大功率密度、降低热阻,基于平面增强型U形IGBT元胞结构设计了一种优化芯片背面的逆导(RC)IGBT芯片。通过将RC-IGBT芯片柔性压接封装成模块,研究模块的高温动、静态性能和子模组的极限性能。通过在芯片正面增加n型载流子存储层结构和结型场效应晶体管(JFET)区注入降低正向导通压降(V_(CE,on)),通过在芯片背面逐渐减小n+区域宽度消除正向导通压降回跳现象。测试结果表明,该模块在125℃、3000 A下V_(CE,on)为3.18 V,反向导通压降(V_(F))为1.95 V。3400 V母线电压下,子模组IGBT能关断3.9倍额定电流,可以通过21 V栅压、10μs的一类短路极限测试;快恢复二极管(FRD)的反向恢复瞬时功率峰值达6 MW以上,并可通过峰值电流达23倍额定电流(11.5 kA)的浪涌测试。相比同类产品,该RC-IGBT模块静态性能和极限性能均具有明显优势,能应用于大电流复杂工况的电网环境中。

An optimized backside reverse conducting(RC)IGBT chip was designed based on the enhanced planar U-shaped IGBT cell structure to further improve the power density and reduce the thermal resistance.The module was obtained by flexible press-pack package of the RC-IGBT chip,and high temperature static and dynamic characteristics of the module and extreme characteristics of the submodule were studied.On the front side of the chip,the forward conduction voltage drop(V_(CE,on))was reduced by introducing the n-type carrier storage layer structure and junction field effect transistor(JFET)region injection,while on the backside of the chip,the forward conduction voltage drop snapback phenomenon was eliminated by gradually reducing the width of the n~+area.Test results show that the module has a(V_(CE,on))of 3.18 V and a reverse conduction voltage drop(V_(F))of 1.95 V at 125℃and 3000 A.Under a bus voltage of 3400 V,the submodule IGBTs can turn off 3.9 times the rated current and can pass the type one short circuit extreme test with a gate voltage of 21 V and 10μs.The peak instantaneous reverse recovery power of the fast recovery diode(FRD)is 6 MW or more,and it can pass the surge test with peak currents up to 23 times the rated current(11.5 kA).Compared with similar products,the RC-IGBT module shows superior static and extreme characteristics,and can be used under high-current complex working conditions in the power grid environment.