高阶显微分析技术在CDM失效问题上的应用

Application of Advanced Microscopic Analysis Techniques for CDM Failure Problems

带电器件模型(CDM)是引起静电放电(ESD)失效问题的主要模型,特别是先进制程和高速射频电路,CDM的故障定位与根因分析对优化ESD设计和改善ESD防护至关重要。借助高阶显微分析技术,如等离子体聚焦离子束(PFIB)、导电原子力显微镜(C-AFM)、电子束感应电流(EBIC)、透射电子显微镜(TEM),可以快速准确地定位失效位置并确认失效机理。通过分析先进制程芯片射频电路增益降低问题,确定了CDM泄放路径与失效形貌,并解释了CDM的损伤机理。通过高阶显微分析技术研究CDM失效问题,有助于优化ESD防护电路,提高芯片可靠性。

Charged device model(CDM)is the main model causing electrostatic discharge(ESD)failure,especially for advanced process and high-speed radio frequency circuits.Failure location and root cause analysis of CDM are essential for optimizing ESD design and improving ESD protection.Advanced microscopic analysis techniques such as plasma focused ion beam(PFIB),conductive atomic force microscope(C-AFM),electron beam induced current(EBIC)and transmission electron microscope(TEM)can be used to quickly and accurately locate the failure position and identify the failure mechanism.Through the analysis of the gain reduction in the radio frequency circuit of advanced process chip,the CDM discharge path and failure morphology were determined,and the damage mechanism of CDM was explained.Studying CDM failure through advanced microscopic analysis techniques helps to optimize ESD protection circuits and improve chip reliability.