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The Reliabilities of HfO_(2)-Based Ferroelectric Devices under Swift Heavy Ion Irradiation

重离子辐照下氧化铪基铁电器件的可靠性
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摘要 HfO_(2)-based ferroelectric films are considered to be one of the key materials for the development of next generation microelectronic devices.Up to now,HfO_(2)-based FeRAM devices show high immunity to proton and radiation^([1,2]).However,to our best knowledge,the e ects of swift heavy ions(SHIs)on HfO_(2)-based ferroelectric lms were rarely reported and its mechanism is still missing.
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出处 《IMP & HIRFL Annual Report》 2022年第1期114-115,共2页 中国科学院近代物理研究所和兰州重离子研究装置年报(英文版)
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