The Reliabilities of HfO_(2)-Based Ferroelectric Devices under Swift Heavy Ion Irradiation

重离子辐照下氧化铪基铁电器件的可靠性

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摘要 HfO_(2)-based ferroelectric films are considered to be one of the key materials for the development of next generation microelectronic devices.Up to now,HfO_(2)-based FeRAM devices show high immunity to proton and radiation^([1,2]).However,to our best knowledge,the e ects of swift heavy ions(SHIs)on HfO_(2)-based ferroelectric lms were rarely reported and its mechanism is still missing.

作者 Li Zongzhen Jiao Yang Zhao Shiwei Liu Yuzhu Liu Jie 李宗臻

机构地区不详

出处《IMP & HIRFL Annual Report》 2022年第1期114-115,共2页 中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

关键词 FERROELECTRIC SWIFT IMMUNITY

分类号 O57 [理学—粒子物理与原子核物理]

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IMP & HIRFL Annual Report

2022年第1期

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The Reliabilities of HfO_(2)-Based Ferroelectric Devices under Swift Heavy Ion Irradiation

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