摘要
Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor materials.This capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D TMDs.Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance.This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor.It delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and performance.In addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic transistors.This review details the two logical expressions of the single 2D-TMD logic transistor,including current and voltage.It also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial synapses.This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications.It underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
基金
supported by the National Key R&D Plan of China(Grant 2021YFB3600703)
the National Natural Science Foundation(Grant 62204137)of China for Youth,the Open Research Fund Program of Beijing National Research Centre for Information Science and Technology(BR2023KF02009)
the National Natural Science Foundation of china(U20A20168,61874065,and 51861145202)
the Research Fund from Tsinghua University Initiative Scientific Research Program,the Center for Flexible Electronics Technology of Tsinghua University,and a grant from the Guoqiang Institute,Tsinghua University.
