摘要
通过对电阻式碳化硅(SiC)晶体生长设备和工艺研究,分析了电阻式长晶炉中温度控制的几种方法,通过对温度控制中关键技术的研究,提出了一种适合大尺寸电阻式碳化硅长晶炉温度控制的方案,并经过实践验证满足碳化硅晶体生长中对温场精确稳定性的控制要求。
Through the study of resistance type silicon carbide crystal growth equipment and process,several methods of temperature control in resistance type crystal growth furnace are analyzed.Through the study of key technologies in temperature control,a temperature control scheme suitable for large-size resistance type silicon carbide crystal growth furnace is proposed,and it is verified through practice that it meets the requirements for precise temperature field stability control in silicon carbide crystal growth.
作者
王宏杰
王毅
刘洪涛
靳丽岩
唐娟娟
WANG Hongjie;WANG Yi;LIU Hongtao;JIN Liyan;TANG Juanjuan(The 2nd Research Institute of CETC,Taiyuan 030024,China)
出处
《电子工业专用设备》
2024年第5期22-26,共5页
Equipment for Electronic Products Manufacturing
关键词
碳化硅
晶体生长
温度控制
Silicon carbide
Crystal growth
Temperature control