摘要
随着我国空间装备的高速发展,尤其是深空探测器,微电子器件抗辐射性能得到广泛关注。抗辐射工艺加固是实现器件抗辐射性能提升的重要途径之一。本文围绕空间总剂量效应和单粒子效应,对近年来集成电路和功率器件辐射效应机理和工艺加固技术的研究进展进行了介绍和总结,为抗辐射工艺加固技术的发展与应用提供了有益参考。
With the rapid development of aerospace equipment and utilization,especially deep space probes,the radiation hardening level of microelectronics has been widely concerned.Radiation hardening by process technology is one of important methods to improve radiation tolerance of spaceborne electronics.In this paper,the recent research progress on the radiation mechanisms and radiation hardening by process technology of integrated circuits and power devices are introduced and summarized,focusing on total ionizing dose effects and single event effects in space.These reviews can provide a useful reference for the development and applications of radiation hardening by process technology.
作者
李博
王磊
刘凡宇
陈思远
陆江
舒磊
LI Bo;WANG Lei;LIU Fanyu;CHEN Siyuan;LU Jiang;SHU Lei(Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China)
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2024年第S02期512-526,共15页
Atomic Energy Science and Technology
基金
国家重点研发计划(2022YFB4401700)
国家自然科学基金(U22B2043,62374184)。
关键词
工艺加固
总剂量效应
单粒子效应
集成电路
功率器件
radiation hardening by process
total ionizing dose effect
single event effect
integrated circuit
power device
