基于内场发射原理的无载流子注入型量子点发光器件光电研究

Non-Carrier-Injection Quantum Dot Light Emitting Device Based on Internal Field Emission

工作于无载流子注入工作模式下的量子点电致发光器件因其简单的结构而受到关注。由于没有外部载流子参与电致发光,揭示该器件稳定工作时所需载流子的来源对于理解器件工作机理、优化器件结构具有重要价值。文章研究了多层量子点薄膜在无载流子注入工作模式下的光电特性,实验结果表明:发光强度会随着交流驱动电压的幅度的增加迅速增加到一个最大值,然后逐渐降低;同样地,发光强度会随着交流驱动频率的增加而增加,然后逐渐降低。此外,在不同电压和频率下该发光谱具有完全相同的中心波长和半峰宽。结合量子点之间存在的绝缘有机配体环境,提出了基于内场发射原理的多层量子点无载流子注入发光模型。该研究有望为获得先进量子点发光技术提供参考。

Quantum dot(QD)light-emitting devices operating in non-carrier-injection electroluminescence(NCIEL)mode have attracted attention due to their extremely simple structure.Since no external carriers are involved in electroluminescence,elucidating the source of carriers required for stable device operation is crucial.It is valuable to understand the mechanism of operation and optimize the device structure.This study focuses on the optoelectronic properties of multilayer QD films in the non-carrier-injection mode.The experimental results show that the luminescence intensity increases rapidly to the maximum value with the increase of AC driving voltage and then decreases gradually.Similarly,the increase in AC driving frequency leads to an initial rise and subsequent decrease in luminescence intensity.In addition,the emission spectra remained consistent in terms of center wavelength and half-peak width at different voltage and frequency settings.Combined with the existence of an insulating organic ligand environment between QDs,a non-carrier-injection luminescence model for multilayer QDs based on the principle of internal field emission is proposed.This study is expected to provide methods for obtaining advanced QD-based light-emitting technology.