摘要
针对侧栅结构高电子迁移率晶体管(High Electron Mobility Transistors,HEMTs)太赫兹探测器,构建了器件的直流输运和太赫兹探测的物理模型。运用自对准工艺,成功制备了形态良好、接触可靠的侧栅结构,有效地解决了器件双侧栅与台面间的接触问题,最终获得了不同栅宽(200 nm、800 nm和1400 nm)的侧栅GaN/AlGaN HEMT太赫兹探测器。通过直流测试表征发现,不同器件的栅宽与其阈值电压之间呈现出明显的线性关系,验证了侧栅结构HEMT太赫兹探测器的直流输运模型。上述结果为完整的侧栅HEMT太赫兹探测器的理论模型提供了实验验证和指导,为侧栅HEMT太赫兹探测器的发展提供了重要支持。
For the high-electron-mobility transistor(HEMT)terahertz detector with a side-gate structure,a physical model for DC transport and terahertz detection of the device was constructed.Using a self-alignment process,wellshaped and reliable contacts for the side-gate structure were successfully fabricated,effectively solving contact issues between the dual gates and the mesa.Ultimately,terahertz detectors with different gate widths(200 nm,800 nm,and 1400 nm)of side-gate GaN/AlGaN HEMTs were obtained.DC tests revealed a clear linear relationship between the gate widths of different devices and their threshold voltages,confirming the DC transport model of the side-gate HEMT terahertz detector.These results provide experimental verification and guidance for the theoretical model of the complete side-gate HEMT terahertz detector,offering significant support for the development of side-gate HEMT terahertz detectors.
作者
康亚茹
董慧
刘晶
黄镇
李兆峰
颜伟
王晓东
KANG Ya-Ru;DONG Hui;LIU Jing;HUANG Zhen;LI Zhao-Feng;YAN Wei;WANG Xiao-Dong(School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;Research Center,HuBei Jiufengshan Laboratory,Wuhan 430074,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第4期526-532,共7页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(61971395)。
关键词
氮化镓
太赫兹探测器
侧栅
高电子迁移率晶体管
GaN-based
terahertz detector
lateral gate
high electron mobility transistors