Sn掺杂ZIF-8衍生ZnO纳米材料的制备及其NO_(2)传感性能

Preparation of Sn-doped ZIF-8-derived ZnO nanomaterials and their NO_(2)sensing properties

具有高灵敏度、低检测限的半导体气体传感器不仅在环境监测中具有重要意义,而且在痕量气体检测中也具有潜在的应用.在本研究中,我们采用溶液法及固相烧结等方法相结合成功地合成Sn掺杂ZIF-8衍生的ZnO纳米材料,使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及傅里叶变化红外光谱分析仪(FT-IR)表征了材料的物相、形貌结构及官能团.本研究制备的ZnO:Sn传感器在180℃下对200 ppm的NO_(2)具有超高的响应(2495)、快速的响应/恢复时间(52/9 s)和低的检测限(0.5 ppb)等出色的气敏性能.ZnO:Sn传感器优异的气敏性能主要归因于ZIF-8衍生的ZnO所具有的多孔结构、大的比表面积及Sn掺杂引起的电子敏化作用.Sn掺杂能显著提高ZnO对NO_(2)的气敏性能,有望应用于低浓度NO_(2)高灵敏性的检测与传感.

The semiconductor gas sensors with high sensitivity and low detection limit not only possesses significant importance in environmental monitoring,but also have great application in trace gas detection.In this study,we successfully synthesized Sn-doped ZIF-8 derived ZnO compound by combining solution-based and solid-phase sintering methods.The material′s phase,morphology structure and functional groups were characterized using X-ray diffraction(XRD),scanning electron microscope(SEM)and Fourier-transform infrared spectroscopy(FT-IR).The ZnO:Sn sensor in this study exhibits excellent gas-sensitive performance,including ultra-high response(2495),fast response/recovery time(52/9 s),and low detection limit(0.5 ppb)for 200 ppm NO_(2)at 180℃.The excellent gas-sensitive performance of the ZnO:Sn sensor is mainly attributed to the porous structure of ZIF-8-derived ZnO,its large specific surface area,and the electron sensitization caused by Sn doping,which significantly improves the gas-sensitive performance of ZnO for NO_(2),and it is expected to be applied in the detection of low NO_(2)concentration with high sensitivity.