基于亚10 nm环栅碳纳米晶体管的性能研究

Performance Study of Sub-10 nm Gate-all-around Carbon Nanotube Transistor Devices

为了进一步减小纳米器件尺寸,以一维环栅碳纳米晶体管为研究对象,采用密度泛函理论和非平衡格林函数的第一性原理计算方法,探索在不同栅长和掺杂条件下晶体管的性能特性。研究表明:当电极掺杂浓度为5×10^(8)m^(-1)时,通过精确控制掺杂浓度和栅长,可以显著提升亚10 nm栅碳纳米晶体管的性能。碳纳米管是构建场效应晶体管的理想沟道材料,可以为实现新原理纳米器件的研制和生产提供重要思路。

To further reduce the size of nanodevices,this work employs the first-principles method of calculations density functional theory and non-equilibrium Green’s functions to explore the performance characteristics of one-dimensional gate-all-around carbon nanotube field-effect transistors under different gate lengths and doping conditions.The study shows that the transistor exhibits excellent performance when the electrode doping concentration is 5×10^(8) m^(-1),through precise control of the doping concentration and gate length,the performance of sub-10-nanometer Gate-All-around carbon nanotube field-effect transistors can be significantly enhanced.This provides an important clue for the development and production of new principle nanodevices.Carbon nanotubes are ideal channel materials for constructing field-effect transistors(FET),which can provide important ideas for the development and production of nanodevices with new principles.