热老化对不同封装形式SOI基压阻式芯片的影响

Effects of Thermal Aging on SOI-Based Piezoresistive Chips of Different Package Forms

采用热老化的手段提高封装后芯片的输出稳定性及使用寿命,并对热老化温度与老化时间的匹配问题进行了研究。首先介绍了压阻传感器的老化机理,然后在不同温度下对同批次不同封装形式绝缘体上硅(SOI)基压阻芯片进行老化,并对芯片老化前后数据进行对比。结果表明,300℃加电老化情况下,芯片稳定输出的时间为12h,且老化后芯片的各项指标均有改善。在温度允许范围内,适当的老化温度可以使芯片达到稳定输出状态,提升工作效率的同时为优化SOI基压阻芯片的老化时间提供了参考。

The thermal aging was used to improve the output stabilities and service life of the packaged chips,the matching of thermal aging temperature and aging time was studied.Firstly,the aging mechanism of piezoresistive sensors was introduced,and then the same batch of the silicon on insulator(SOI)-based piezoresistive chips with different package forms were aged at different temperatures,and the data of chips before and after aging were compared.The results show that under the electrical aging at 300℃,the stable output time of the chips is 12 h,and all the indicators of the chips are improved after aging.Within the allowable temperature range,the appropriate aging temperature can make the chips reach the stable output states,improve the working efficiency,and provide a reference for optimizing the aging time of SOI-based piezoresistive chips.