η相酞菁锌纳米线在光电探测方面的研究

Study on photoelectric detection of zinc phthalocyanine η phase nanowires

通过气相沉积法在低温区制备酞菁锌纳米线.X射线衍射表征结果显示,酞菁锌纳米线的晶体结构为η相.通过光电性能测试发现,酞菁锌纳米线的光响应远优于其原料,表明该纳米线具有成为高光响应度光电探测器材料的巨大潜力.使用AM 1.5 G太阳模拟器作为光源,在所有偏置电压下,酞菁锌纳米线均表现出显著的光响应,而其原料的光暗电流极不稳定.在紫光、蓝光、绿光和红光照射条件下,酞菁锌纳米线的光响应度远高于对应的原料,分别是其7.12×10^(3)、7.21×10^(3)、3.59×10^(3)和4.68×10^(3)倍.酞菁锌纳米线相比于原料更为优异的光电特性为其在光电探测领域的深入研究提供了基础.

Zinc phthalocyanine nanowires were synthesized in the low-temperature region using the vapor deposition method.X-ray diffraction(XRD)characterization confirmed that the crystal structure of the zinc phthalocyanine nanowires is in theη-phase.Photovoltaic performance tests revealed that the light response of the zinc phthalocyanine nanowires is significantly superior to that of the raw material,indicating their great potential as the high-responsivity photodetector material.Using an AM 1.5 G solar simulator as the light source,the zinc phthalocyanine nanowires exhibited remarkable light response across all bias voltages,while the raw material showed highly unstable light-dark current.Under illumination with violet,blue,green,and red light,the light responsivity of the zinc phthalocyanine nanowires was significantly higher than that of the original material,by factors of 7.12×10^(3),7.21×10^(3),3.59×10^(3),and 4.68×10^(3),respectively.The superior optoelectronic properties of zinc phthalocyanine nanowires compared to the raw material provide a solid foundation for further research in the field of photodetection.