二维硒氧化铋材料的制备方法研究进展

Research progress on the preparation method of two-dimensional bismuth oxyselenide materials

硒氧化是一种新兴的二维半导体材料,其具有较高的载流子迁移率,优异的热学、化学稳定性,机械柔韧性好等特点。在光电子学、能量存储等领域有着广阔的应用前景。但是目前二维硒氧化铋薄膜的合成一般采用自下而上或自上而下的方法。获得大尺寸、原子级厚度的二维硒氧化铋单晶以及有效的转移薄膜仍是其制备过程中需要进一步研究的关键问题。本文综述了国内外关于二维硒氧化铋材料的制备方法,从前驱体、反应条件等方面介绍了每种制备方法的优缺点以及改进完善之处,为今后高效可控制备特定形貌和尺寸的高性能硒氧化铋材料提供参考。

Bismuth oxyselenide is an emerging two-dimensional semiconductor material that has the characteristics of high carrier mobility,excellent thermal and chemical stability and good mechanical flexibility.It has broad application prospects in optoelectronics,energy storage and other fields.However,at present,the synthesis of two-dimensional bismuth oxyselenide films generally adopts bttom-up or top-down methods.The acquisition of two-dimensional bismuth oxyselenide single crystals with large size and atomic thickness and the efficient transfer of films are still key issues that need to be further studied in the preparation process.This paper reviews the preparation methods of two-dimensional bismuth oxyselenide materials at home and abroad.Meanwhile,it also discusses the advantages and disadvantages of each method and the improvements from the aspects of precursors and reaction conditions,so as to provide a reference for the efficient and controllable preparation of high-performance bismuth oxyselenide materials with specific morphology and sizes in the future.