A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

GaN power electronic devices,such as the lateral AlGaN/GaN Schottky barrier diode(SBD),have received significant attention in recent years.Many studies have focused on optimizing the breakdown voltage(BV)of the device,with a particular emphasis on achieving ultra-high-voltage(UHV,>10 kV)applications.However,another important question arises:can the device maintain a BV of 10 kV while having a low turn-on voltage(V_(on))?In this study,the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV.Moreover,by utilizing a doublebarrier anode(DBA)structure consisting of platinum(Pt)and tantalum(Ta),a remarkably low Von of 0.36 V was achieved.This achievement highlights the great potential of these devices for UHV applications.