SiC MOSFET开关瞬态解析建模综述

Overview of Switching Transient Analytical Modeling of SiC MOSFET

在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)可以应用于更高开关速度,其开关瞬态特性更为复杂,开关瞬态解析建模也更加困难。该文总结现有的针对SiC MOSFET与二极管换流对的开关瞬态解析建模方法,在建模过程中依次引入各种简化假设,按照简化程度由低到高的顺序,梳理解析建模的逐步简化过程。通过对比,评估各模型的优缺点以及适用场合,对其中准确性、实用性都较强的分段线性模型进行详细介绍;之后,对开关瞬态建模中关键参数的建模方法进行总结与评价;最后,指出现有SiC MOSFET开关瞬态解析模型中存在的问题,并对其未来发展给出建议。

In the field of evaluating and optimizing the switching transient characteristics of semiconductor devices,analytical models have been widely studied for their simplicity,intuitiveness,and ease of application.Compared with silicon-based power devices of the same power level,higher switching speeds of silicon carbide(SiC)metal-oxide-semiconductor field effect transistors(MOSFETs)lead to more complex switching transient characteristics,and the analytical modeling of their switching transient processes is more difficult.This paper summarizes the existing analytical transient models for SiC MOSFET and diode commutation pair.Various simplification assumptions are introduced successively in the modeling process,and the gradual simplification process of the analytical model is organized in an order that corresponds to the degree of simplification from low to high.By comparison,the advantages and disadvantages of each model as well as its applications are evaluated,and the piecewise linear model is introduced in detail.After that,the modeling methods of key parameters in switching transient modeling are summarized and evaluated.Finally,the existing problems in the switching transient analytical models of SiC MOSFET are pointed out,and suggestions for its future development are given.