具有量子点插入层的阻变存储器电学特性研究

Electrical properties of RRAM with quantum dot insertion layer

目的研究量子点插入层的氮离子吸附能力对AlN基阻变存储器的电学特性的影响。方法通过实验制备具有单层AlN阻变层的阻变存储器和具有AlN/PbS量子点堆叠结构的阻变存储器。通过材料表征、对器件电学特性表征以及对电流传导机制分析等手段研究具有AlN/PbS量子点堆叠结构的阻变存储器的电阻切换机制。结果与单层AlN基阻变存储器相比,AlN/PbS量子点堆叠结构阻变存储器具有优异的电阻开关特性,如Forming-free特性、低功耗特性以及优异的稳定性。结论器件的电阻开关过程显著受到PbS量子点插入层的调控作用,量子点插入层的引入、氮空位的分布情况和电场的分布情况是控制AlN基阻变存储器电阻切换性能的关键因素。

Purposes—To study the effect of the adsorption capacity of nitrogen ions in quantum dot insertion layer on the electrical properties of AlN-based resistive random access memory(RRAM).Methods—The RRAM with single AlN layer and RRAM with stacked AlN/PbS quantum dots are prepared.The resistive switching mechanism of the RRAM with stacked AlN/PbS quantum dots is studied by means of material characterization,the characterization of electrical properties of RRAM and the analysis of current conduction mechanism.Results—Compared with the RRAM with single AlN layer,the RRAM with stacked AlN/PbS quantum dots exhibit excellent resistive switching characteristics,such as forming-free characteristics,low power consumption characteristics and excellent stability.Conclusions—The resistive switching process of RRAM is significantly regulated by the insertion layer of PbS quantum dots.The introduction of quantum dot insertion layer,the distribution of nitrogen vacancy and the distribution of electric field are the key factors to control the performance of AlN-based RRAM.