Scalable electronic and optoelectronic devices based on 2D TMDs

Materials are the building blocks of various functional applications.With Moore’s Law approaching Si’s physical limits,traditional semiconductor-based monolithic three-dimensional(M3D)integrated circuits always suffer from the issues,including electrical performance(carrier scattering),chip-overheating(low heat conductivity),electromagnetic interference.Recently,two-dimensional transition metal dichalcogenides(2D TMDs)inherit the atomically-thin thickness of 2D materials and exhibit outstanding natures,such as smooth flatness(excellent compatibility),electronic property(thickness below 1 nm),absence of dangling bonds(decreasing carrier scattering),making them highly promising for next-generation functional devices in comparison with traditional bulk materials.Up to now,2D TMD-based transistors have already exhibited the feasibility of replacing conventional one in terms of performances.Furthermore,the technology of large-area 2D TMDs films has been greatly successful,which lays the foundation for the fabrication of scalable 2D TMD-based devices.Besides,the scalable devices based on 2D TMDs also show the prospects of realizing ultra-high-density M3D integrated circuits owing to the presence of outstanding compatibility.Herein,we focus some thriving research areas and provide a systematic review of recent advances in the field of scalable electronic and optoelectronic devices based on 2D TMDs,including large-area synthesis,property modulation,large-scale device applications,and multifunctional device integration.The research in 2D TMDs has clearly exhibited the tremendous promise for scalable diversified applications.In addition,scalable 2D TMD-based devices in terms of mass production,controllability,reproducibility,and low-cost have also been highlighted,showing the importance and benefits in modern industry.Finally,we summarize the remaining challenges and discuss the future directions of scalable 2D TMDs devices.