电沉积铜铟硫薄膜的制备及性能研究

Study on preparation and properties of electrodeposited copper indium sulfur thin films

随着化石能源的日益枯竭,开发石油化工产业的节能材料是大势所趋。文中在柠檬酸钠体系中采用一步电沉积法进行沉积太阳能电池铜铟硫(CIS)吸收层,再将薄膜进行热处理。分别探究了CuSO_(4)浓度、In_(2)(SO_(4))_(3)浓度、Na_(2)S_(2)O_(3)浓度、柠檬酸钠浓度、热处理温度、pH及明胶量等因素对CuInS_(2)薄膜性能的影响;并将薄膜与ZnS组装成了CuInS_(2)薄膜太阳能电池。采用Ⅰ-Ⅴ法测试光电转换性能,冷热探针法测试半导体类型,紫外分光光度计测试禁带宽度,原子力显微镜测试了薄膜表面形貌。调节电解液配比、热处理温度等因素得到的最优铜铟硫(CuInS_(2),CIS)薄膜,其表面均匀,禁带宽度为1.59 eV,与理论值最接近;半导体类型为p型,光照和暗盒条件下的电池Ⅰ-Ⅴ曲线斜率偏移率为112.20%。

With the depletion of fossil energy,the development of energy-saving materials in the petrochemical industry is the trend.In this paper,the copper indium sulfur(CIS)absorption layer of solar cell was deposited by one-step electrodeposition method in sodium citrate system,and then the film was heat treated.The effects of CuSO_(4) concentration,In_(2)(SO_(4))_(3) concentration,Na_(2)S_(2)O_(3) concentration,sodium citrate concentration,heat treatment temperature,pH and gelatin content on the properties of CuInS_(2) films were investigated.The thin film and ZnS were assembled into CuInS_(2) thin film solar cells.The photoelectric conversion performance was measured by Ⅰ-Ⅴ method,the semiconductor type was measured by hot and cold probe method,the band gap width was measured by ultraviolet spectrophotometer,and the surface morphology of the film was measured by atomic force microscope.The optimal CuInS_(2)(CIS)film obtained by adjusting the electrolyte ratio and heat treatment temperature had a uniform surface and a band gap of 1.59 eV,which is the closest to the theoretical value.The semiconductor type is P-type,and the slope deviation of the Ⅰ-Ⅴ curve of the battery was 112.20%under light and cassette conditions.