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变温霍尔效应实验仪的研制与性能测试

Development and performance test of variable temperature Hall effect experiment instrument
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摘要 利用性能优异的半导体热电片,搭建变温霍尔效应实验仪器,可实现在变温环境下(253K~413K)对N型霍尔组件进行霍尔效应相关数据的测量;进而探索霍尔组件的霍尔系数RH(T)、电导率σ(T)、霍尔迁移率μH(T)与温度的关系。仪器可稳定升温和降温,且不需要液氮,既扩充了实验内容又保证了实验安全。实验仪器模块化,不同高校可根据实际情况引入不同的实验内容,实验仪器成本可控。 Using semiconductor thermoelectric chips with excellent performance,an experimental instrument for Hall effect at variable temperature is built,which can measure the Hall effect related data of N-type Hall module at variable temperature(253K~413K).Furthermore,the relationship between Hall coefficient R H(T),conductivity σ(T)and Hall mobilityμH(T)and temperature is explored.The instrument can stably heat up and cool down,and does not need liquid nitrogen,which not only expands the experimental content but also ensures the safety of the experiment.The experimental instruments are modular,and different universities can introduce different experimental contents according to the actual situation,and the cost of experimental instruments is controllable.
作者 赵乘暄 张航 胡文柯 梁小冲 ZHAO Chengxuan;ZHANG Hang;HU Wenke;LIANG Xiaochong(College of Physics,Sichuan University,Chengdu 610065,China)
出处 《实验室科学》 2024年第5期159-163,170,共6页 Laboratory Science
基金 四川大学新世纪高等教育教学改革工程(第十期)项目(项目编号:SCU10056) 四川大学实验技术立项项目(项目编号:SCU221019)。
关键词 半导体 变温霍尔效应 霍尔系数 电导率 霍尔迁移率 semiconductors variable temperature hall effect Hall coefficient electrical conductivity Hall mobility
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