电子束光刻胶制备方法的探索和研究

Study on Preparation of Electron Beam Photoresist

光刻技术和光刻材料是半导体行业发展的重要因素。电子束光刻具有超高深宽比、超高对比度及良好的耐干法蚀刻性能等优越性,以其分辨率高和性能稳定被认为是最具有发展前景的光刻技术之一,光刻技术的进步往往与光刻材料发展密不可分。本文探索和研究电子束光刻胶的制备方法,采用对比实验研究电子束光刻胶,最终制备出最佳的分辨率和稳定性电子束光刻胶。

Photolithography technology and photolithography materials are important factors in the development of semiconductor industry.Electron beam lithography(EBL)has the advantages of ultra-high depth to width ratio,ultra-high contrast and good dry etching resistance.It is considered to be one of the most promising photolithography technologies for its high resolution and stable performance,the progress of photolithography technology is closely related to the development of photolithography materials.The preparation method of e-beam photoresist was explored,comparative experiments was used to study and finally prepares the best resolution and stability e-beam photoresist.