摘要
基于硼掺杂金刚石外延材料,开展了安培级大电流金刚石功率肖特基势垒二极管(SBD)的研制。为了获得高的电流导通能力和击穿电压,该器件采用了垂直结构设计,包含300μm厚的硼重掺杂金刚石衬底和2.5μm厚的轻掺杂漂移层。采用低功函数金属Ti与p型金刚石形成了良好的肖特基接触,肖特基势垒高度1.23 eV,理想因子1.54,并在肖特基电极边缘进行了硼离子注入以抑制边缘电场。研制的金刚石功率SBD正向导通电流高达1 A,反向击穿电压653 V,巴利加优值(Baliga's Figure Of Merit,BFOM)达到了20.1 MW/cm^(2)。
Based on the boron doped diamond epitaxial material,an ampere-scale high current diamond power Schottky barrier diode(SBD)is developed.In order to achieve high on-current and high breakdown voltage,the device is designed with a vertical structure consisting of a 300μm heavily boron doped diamond substrate and a 2.5μm lightly doping drift layer.A good Schottky contact is formed by using low work function metal Ti with p-type diamond.The Schottky barrier height is 1.23 eV and the ideal factor is 1.54.Boron ion implantation is carried out at the edge of the Schottky electrode to suppress the edge electric field.The diamond power SBD demonstrates a forward on-current of 1 A,a reverse breakdown voltage of 653V,and a Baliga s Figure of Merit(BFOM)of 20.1 MW/cm^(2).
作者
郁鑫鑫
王若铮
谯兵
李忠辉
沈睿
周建军
周立坤
Yu Xin-xin;Wang Ruo-zheng;Qiao Bing;Li Zhong-hui;Shen Rui;Zhou Jian-jun;Zhou Li-kun(CETC Key Laboratory of Carbon-based Electronics,Nanjing Electronic Devices Institute,Nanjing 210016,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;School of Electronics and Information Engineering,Xi'an Jiaotong University,Xi’an 710049,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Nanjing 210016,China)
出处
《真空电子技术》
2024年第5期59-63,共5页
Vacuum Electronics
