摘要
使用100 MeV质子对SensL MicroFJ-60035-TSV SiPM进行地面辐照实验,得到了SiPM漏电流增长与质子注量的关系,漏电流增长率为每片SiPM 3.98×10^(-7)μA·cm^(-2),并与其他文章的地面辐照实验结果进行对比,验证了结果一致性;实验结果与GRID-02载荷在轨漏电流增长进行对比,在量级上一致,增长斜率低约40%,进一步定量分析需要详细讨论空间在轨辐射环境的粒子能谱与类型。此外,实验中还设置了开偏压与关偏压两种测试条件,探究了工作电压对SiPM辐照损伤可能的影响。
In this paper,a ground irradiation experiment on SensL MicroFJ-60035-TSV SiPM using 100 MeV protons is conducted.The relationship between the SiPM dark current growth and the proton fluence is obtained,which is 3.98×10^(-7)(μA·cm^(-2))/chip,and the results are compared with ground irradiation experiments in other papers.The consistency of the results is verified.Comparing the experimental results with the in-orbit damage of the GRID-02,the dark current growth rate is about 40%lower.Two groups of SiPM,with bias on and off during irradiation,are set to explore the potential impact of operating voltage on SiPM irradiation damage.
作者
王奇东
李琛
王迪
潘晓凡
郑煦韬
曾鸣
WANG Qidong;LI Chen;WANG Di;PAN Xiaofan;ZHENG Xutao;ZENG Ming(Department of Engineering Physics,Tsinghua University,Beijing 100084,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)
出处
《现代应用物理》
2024年第4期34-39,共6页
Modern Applied Physics
基金
“天格计划”得到清华大学校自主科研计划追光计划专项资助
清华-昆山学生创新创业人才培养合作协议的专项支持
关键词
辐照损伤
硅光电倍增管
天格计划
漏电流
空间项目
irradiation damage
silicom photomul tiplier(SiPM)
gamma-ray integrated deterctors(GRID)
dark current
space projects
