摘要
Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.
基金
D.T.H.T.acknowledges funding from the A^(*)STAR MTC Grant(M21K2c0119)
Ministry of Education ACRF Tier 2 Grant(T2EP50121-0019)
National Research Foundation Investigatorship(NRF-NRFI08-2022-0003)
Quantum Engineering Programme 2.0 grant(NRF2022-QEP2-01-P08)
A^(*)STAR Institute of Microelectronics(C220415015).
