GaAs基近红外锥形半导体激光器的研究进展

Research progress on GaAs-based near-infrared tapered semiconductor lasers

基于GaAs衬底的近红外波段半导体激光器已经取得了显著的发展。在大功率研究方面,因为可以同时实现高功率、高光束质量的优良特性,主振荡功率放大器结构的锥形半导体激光器成为了广受关注的研究热点。归纳了近年来国内外关于GaAs基锥形激光器的代表性研究成果,讨论了激光器器件结构设计(包括脊形区、锥形区以及布喇格光栅等的设计)和外延层优化在理论研究及实验方面取得的进展;围绕高功率、高光束质量、高亮度、窄线宽应用需求,总结整理了锥形激光器的研究进展与性能特征;对本团队关于锥形激光器的研究工作进行了简要介绍;并展望了锥形激光器未来的发展方向。

Semiconductor lasers in the near-infrared wavelength range based on GaAs substrates have made significant advancements.In the realm of high-power research,the tapered semiconductor lasers with a master-oscillator power-amplifier structure have garnered widespread attention due to its excellent characteristics,allowing for the simultaneous achievement of high power and high beam quality.The representative research results on GaAs-based tapered lasers at home and abroad in recent years were summarized,and the progresses in theoretical studies and experiments on the design of laser device structures(including the design of ridge and tapered regions as well as Bragg gratings)and the optimization of epitaxial layers were discussed.Focusing on the demands for high power,high beam quality,high brightness,and narrow linewidth applications,the research progress and performance characteristics of tapered lasers were summarized.The research work of the tapered lasers was briefly introduced.Furthermore,an outlook on the future development directions of tapered semiconductor lasers has been provided.