金刚石离子注入射程及损伤的模拟研究

Simulation Research on the Ion Implantation Range and Damage of Diamond

离子注入法作为改善半导体材料表层电学性能的有效方法,被应用于金刚石基半导体器件的制造过程中。使用SRIM软件模拟并研究了Ar^(+)、N^(+)、B^(+)、P^(+)、As^(+)等离子在不同能量(20~300 keV)和不同入射角度(0°~40°)下注入金刚石时的射程,及其对金刚石造成的损伤,结果表明,离子的种类、能量和注入角度均是影响离子射程和造成靶材损伤的重要因素,且各有其影响规律。通过改变这些参数,能够精准控制注入离子在金刚石中的射程和靶材损伤程度,为相关科研生产工作提供指导。

As an effective method to improve the electrical properties of semiconductor material surface,ion implantation method has been applied in the manufacturing process of diamond-based semiconductor devices.The ranges of Ar^(+),N^(+),B^(+),P^(+)and As^(+)and other ions injected into diamond at different energies(20-300 keV)and different incidence angles(0°-40°)and the damage caused to diamond are simulated and studied by using SRIM software.The results show that the type,energy and injection angle of ions are important factors that affect the range of ions and the damage of target material,and each of them has its own influence law.By changing these parameters,the range of implanted ions in diamond and the damage degree of target material can be accurately controlled,which provides guidance for scientific research and production.