镀碳膜对In掺杂GaSb晶体结构及性能的影响

Effect of Carbon Coating on the Crystal Structure and Properties of In-doped GaSb

针对GaSb晶体合成过程中Ga与Sb之间的不相容区域及较高的受主缺陷问题,基于垂直布里奇曼法,探讨了镀碳膜对GaSb晶体的影响,以及在镀碳膜后掺杂In对其物相组成、硬度、电阻率和热稳定性的影响。结果表明,镀碳膜能够有效隔绝原料与坩埚内壁的接触,从而提升晶体的结晶度。镀碳膜处理后,晶体的硬度从4.41 GPa下降至4.11 GPa,电阻率降至0.0198Ω·cm,同时热稳定性也得到了改善。在镀碳膜后进行In掺杂时,晶体的结晶度进一步显著提升,硬度从最低的4.11 GPa降至3.7 GPa,电阻率降至0.0019Ω·cm,热稳定性明显增强。研究结果为制备高性能的GaSb晶体提供了有效的方法。

In order to solve the problem of incompatible region and high acceptor defect between Ga and Sb in the synthesis process of GaSb crystal,the effect of carbon coating on GaSb crystal and the effect of doping In after carbon coating on its phase composition,hardness,resistivity and thermal stability were investigated based on the vertical Bridgeman method.The results show that the carbon coating can effectively isolate the contact between the raw material and the inner wall of the crucible,thereby improving the crystallinity of the crystal.After carbon coating,the hardness of the crystal decreased from 4.41 GPa to 4.11 GPa,the resistivity decreased to 0.0198Ω·cm,and the thermal stability was also improved.The crystallinity of the crystal was further significantly improved,the hardness was reduced from the lowest 4.11 GPa to 3.7 GPa,the resistivity was reduced to 0.0019Ω·cm,and the thermal stability was significantly enhanced.The research provides an efficient method for the preparation of high-performance GaSb crystals.