SiO_(2)添加量对CZP陶瓷力学及介电性能影响

Effect of SiO_(2)addition on mechanical and dielectric properties of CZP ceramics

本文研究了SiO_(2)添加量对CZP(CaZr_(4)P_(6)O_(24))陶瓷力学性能和介电性能的影响。通过XRD分析、显微结构观察和抗弯强度测试等手段,探讨了不同SiO_(2)添加量下CZP陶瓷的微观结构变化和力学性能表现。结果表明,适量SiO_(2)的加入可以显著提高CZP陶瓷的抗弯强度,而过量或过少的SiO_(2)添加都不利于陶瓷力学性能的提升。SiO_(2)作为晶粒生长抑制剂,可通过控制SiO_(2)的添加量来调控CZP陶瓷的微观结构和力学性能。本研究在CZP粉料中加入晶粒生长抑制剂SiO_(2)的添加量为3wt%时,CZP陶瓷晶粒最小,力学性能最好,同时介质损耗值最小。

The effects of SiO_(2)addition on the mechanical and dielectric properties of CZP(CaZr_(4)P_(6)O_(24))ceramics were studied.The microstructure and mechanical properties of CZP ceramics with different SiO_(2)content were investigated by XRD analysis,microstructure observation and bending strength test.The results show that the addition of appropriate amount of SiO_(2)can significantly improve the bending strength of CZP ceramics,while excessive or too little SiO_(2)addition is not conducive to the improvement of mechanical properties of ceramics.As a grain growth inhibitor,SiO_(2)can control the microstructure and mechanical properties of CZP ceramics by controlling the amount of SiO_(2).In this study,when the addition of grain growth inhibitor SiO_(2)in the CZP powder is 3wt%,the CZP ceramic has the smallest grain size,the best mechanical properties,and the minimum dielectric loss.