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黑磷纳米片在重金属离子传感器中的研究进展

Research progress in black phosphorus nanosheets for heavy metal ion sensors
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摘要 黑磷(BP)纳米片具有特殊的褶皱状结构从而使其具有可调的直接带隙、传输各向异性、光致发光等特性,这些独特的性质使其被广泛应用于构建金属离子传感器并在环境监测等研究领域展现了巨大的应用潜力。本文综合介绍了BP纳米片制备方法及其构建的不同类型传感器在重金属离子检测中的应用。首先,基于“自上而下”法和“自下而上”法分别介绍了不同类型的BP纳米片制备方法,并对不同制备方法的优缺点进行了归纳和总结。然后,详细阐述了BP纳米片构建的场效应晶体管(FET)传感器、电化学传感器和光化学传感器在检测重金属离子中的研究进展,对不同类型传感器的独特优势进行了分析,其中FET传感器具有优异的检出限,电化学传感器具有响应时间短、操作简单等优势,而光化学传感器则表现出更宽的检测范围。进一步,总结并指出目前BP纳米片构建的重金属离子传感器能够检测的重金属离子的种类比较有限,稳定性和选择性也有待进一步提升。最后,针对BP纳米片在构建不同类型重金属离子传感器中面临的挑战,指出BP基传感器应朝着开发低成本、高质量BP纳米片的制备方法以及BP纳米片的结构优化和功能化修饰等方面的研究方向发展。在拓展重金属离子检测应用方面,结合新技术有望使其在实际应用中有新的突破。 Black phosphorus(BP)nanosheets have a special folded structure,which gives them an adjustable band gap,transmission anisotropy,and photoluminescence.These unique properties make BP nanosheets widely used in the construction of metal ion sensors and show great application potential in environmental monitoring and other research fields.In this paper,the preparation methods of BP nanosheets and their applications of different sensors in detecting heavy metal ions were introduced.Firstly,different preparation methods for BP nanosheets were introduced based on the“top-down”and“bottom-up”methods,and their advantages and disadvantages were summarized.Then,the research progress of BP nanosheets based field effect transistor(FET)sensors,electrochemical sensors,and photochemical sensors for the detection of heavy metal ions were described in detail.Among these sensors,the FET sensor shows an excellent detection limit,the electrochemical sensor has advantages of short response time and simple operation.The photochemical sensor shows a wider detection range than that of others.Furthermore,it is concluded that the types of heavy metal ions that BP nanosheets based sensors can detect are relatively limited,and the stability and selectivity need to be further improved.Finally,in view of the challenges faced by BP nanosheets for constructing different types of heavy metal ion sensors,we should develop low-cost and high-quality BP nanosheets preparation methods,and structure optimization and functional modification of BP nanosheets.In the aspect of expanding the application of BP nanosheets for the detection of heavy metal ions,it is expected to make a breakthrough in the practical applications by combining with novel technology.
作者 刘亮 史转转 李园 李运芃 吴小帅 施璠 郭春显 LIU Liang;SHI Zhuanzhuan;LI Yuan;LI Yunpeng;WU Xiaoshuai;SHI Fan;GUO Chunxian(School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,Jiangsu,China;School of Chemistry and Chemical Engineering,Hainan Normal University,Haikou 571158,China)
出处 《材料工程》 EI CAS CSCD 北大核心 2024年第11期50-61,共12页 Journal of Materials Engineering
基金 江苏省高等学校自然科学研究面上项目(21KJB180018)。
关键词 黑磷 纳米片 重金属离子 检测 FET 电化学 光化学 传感器 black phosphorus nanosheets heavy metal ion detect FET electrochemical photochemical sensor
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  • 1李卉,赵勇胜,杨玲,周冰,王飞,宋兴龙,王铁军.蔗糖改性纳米铁降解硝基苯影响因素及动力学研究[J].吉林大学学报(地球科学版),2012,42(S3):245-251. 被引量:8
  • 2Novoselov, K. S.; Geim, A. K. Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A.Electric field effect in atomically thin carbon films. Science 2004, 306, 666-669.
  • 3Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183-191.
  • 4Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science 2010, 327, 662-662.
  • 5Geim, A. K. Graphene: Status and prospects. Science 2009, 324, 1530-1534.
  • 6Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene- like two-dimensional materials. Chem. Rev. 2013, 113, 3766-3798.
  • 7Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
  • 8Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature 2005, 438, 197-200.
  • 9Mak, K. F.; Lee, C. G.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
  • 10Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934-9938.

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