p-on-n型10μm像元间距长波1280×1024红外探测器制备研究

Preparation Research of p-on-n Long-Wave 1280×1024 Infrared Detectors with 10μm Pixel Pitch

采用p-on-n结构的碲镉汞红外探测器芯片的暗电流低、少子寿命长,是目前高性能红外探测器的主流发展方向。为了满足未来红外探测器小型化的发展需求,开展了p-on-n型10 m像元间距长波1280×1024探测器芯片研究。针对As离子注入激活、长波小间距芯片制备技术的难点,开展了As离子注入技术、As激活退火技术的研究分析。通过不同的表征方法验证了最佳条件,并通过器件工艺进行了探测器芯片的制备。测试其I-V特性曲线,获得了性能较好的探测器芯片。该研究对小像元间距p-on-n型长波碲镉汞焦平面器件的制备具有重要意义。

The HgCdTe infrared detector chip with p-on-n structure has low dark current and long lifetime.It is the mainstream development direction of the high-performance infrared detector.In order to meet the development requirement of miniaturization of the future infrared detector,the p-on-n long-wave 1280×1024 detector with 10 m pixel pitch was studied.In response to the difficulties of As ion implantation activation and long-wave small-pitch chip preparation technology,research and analysis have been conducted on As ion implantation technology and As activation annealing technology.The optimal conditions were verified by different characterization methods,and the detector chip was prepared through device technology.The I-V characteristic curve was tested,and a detector chip with good performance was obtained.This study is of great significance for the preparation of small-pitch long-wave p-on-n cadmium telluride mercury focal plane devices.