摘要
利用COMSOL multiphysics软件对基于Ga_(2)O_(3)/VO_(2)的异质结光电器件进行了二维物理仿真。分析并报道了基于VO2相变调控的Ga_(2)O_(3)/VO_(2)异质结光电器件的掺杂曲线、能级图、电场分布与电势分布等。探索了器件在光电探测器方面的应用,通过模拟器件在1 V偏压和10μW的光照条件下峰值响应率为0.068 A/W,抑制比(R250 nm/R450 nm)达到105量级。该模拟计算数据为进一步优化Ga_(2)O_(3)/VO_(2)光电二极管实验研究和应用有所裨益。
In this paper,two-dimensional physical modeling and simulation of Ga_(2)O_(3)/VO_(2)heterojunction optoelec⁃tronic devices were carried out using COMSOL multiphysics software.The doping curve,energy level diagram,elec⁃tric field distribution and potential distribution of Ga_(2)O_(3)/VO_(2)heterojunction optoelectronic devices based on VO_(2)phase transition regulation are analyzed and reported.The application of the device in photodetector is explored.The peak response rate is 0.068 A/W and the rejection ratio(R250 nm/R450 nm)reaches 105 orders under 1 V bias and 10μW illumination conditions.The simulation data are helpful for further optimization of experimental research and ap⁃plication of Ga_(2)O_(3)/VO_(2)photodiodes.
作者
冯云松
周长祺
王思雨
路远
金伟
商袁昕
李亚繁
陈友才
FENG Yunsong;ZHOU Changqi;WANG Siyu;LU Yuan;JIN Wei;SHANG Yuanxin;LI Yafan;CHEN Youcai(Infrared and Low Temperature Plasma Key Laboratory of Anhui Province,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China;State Key Laboratory of Pulsed Power Laser Technology,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China;Advanced Laser Technology Laboratory of Anhui Province,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2024年第11期1883-1888,共6页
Chinese Journal of Luminescence
基金
脉冲功率激光技术国家重点实验室主任基金(SKL2022ZR05)
国防科技大学科研计划项目(ZK22-26)
安徽省自然科学基金(1908085MA13)。
