镁掺杂氧化锌基阻变存储器的制备研究

Research on the Preparation of Magnesium-doped ZnO-based Resistance Random Access Memory

近年来,由于大数据的迅速发展,人类对集成电路中半导体存储器的容量、密度以及存储速度提出越来越高的要求。阻变存储器(ResistanceRandomAccess Memory,RRAM)具有结构简单、存储密度高、擦写速度快、写入电压低、耐久性高等特点,使其成为了最具发展潜力的新型半导体存储器之一。金属氧化物如ZnO、MgO等材料具有与CMOS工艺良好的兼容性,易于三维集成的优势,因此它们是制备RRAM的理想材料。文章主要开展了磁控溅射法镁掺杂氧化锌(MgZnO)薄膜制备及其RRAM性能的研究,研究出了MgZnO薄膜的制备对RRAM特性的影响规律。

In recent years,due to the rapid development of big data,humans have put forward increasing requirements for capacity,density and storage speed of semiconductor memories in integrated circuits.Resistance random access memory(RRAM)device hosts advantages of simple structure,high storage density,high writing and reading speeds,low writing voltage and high durability,which make it as one of the most promising new semiconductor memory devices.Due to good compatibility with CMOS technology and 3D integration,metal oxides such as ZnO,MgO are ideal materials for the fabrication of RRAM devices.In this paper,the magnesiumdoped zinc oxide(MgZnO)thin film is fabricated through magnetron sputtering and performances of RRAM are analyzed.The influence of the preparation process of MgZnO thin film on the properties of RRAM is studied.