基于稳态集-射极饱和电压的IGBT功率模块疲劳失效模型的研究

Research on Fatigue Failure Model of IGBT Power Module Based on Steady-State Collector-Emitter Saturation Voltage

随着绝缘栅双极型晶体管(insulated gate bipolar transistor, IGBT)功率模块在民用和军用领域应用的不断深入,IGBT功率模块在长时间电-热应力下的疲劳老化问题越来越突出。本文基于半导体物理和器件可靠性理论,研究IGBT功率模块封装失效的产生原因,分析焊料层和键丝失效的作用机理和表现特征。在研究IGBT通态电压模型的基础上,提出了一种基于稳态集-射极饱和电压的IGBT功率模块疲劳老化模型,实现对焊料层疲劳和键丝疲劳等封装老化问题的综合表征。搭建IGBT功率模块的电-热老化实验测试平台,进行了功率循环老化实验验证,结果表明本文模型可以较为准确地评估IGBT功率模块封装的疲劳老化程度。

With the increasing application of insulated gate bipolar transistor(IGBT)power module in both civil and military fields,the issue of fatigue aging under electrothermal stress has gained critical importance.Based on the theory of semiconductor physics and device reliability,this paper investigates package failures of IGBT power modules,and analyzes the mechanism and performance characteristics of solder layer and bonding line failures.By examining the IGBT conduction model,we propose a novel fatigue aging model based on the steady-state collector-emitter saturation voltage,enabling comprehensive characterization of packaging problems such as solder layer fatigue and wire fatigue.To validate the model,an electro-thermal aging test platform is built.Experimental results from cyclic aging tests verifies that the proposed fatigue aging model can accurately evaluate the fatigue aging degree of IGBT power module packages.