摘要
采用柠檬酸-甘氨酸燃烧法合成了B位Ga元素掺杂的Sr_(2)Fe_(1.5)Mo_(0.5-x) Ga_(x)O_(6-δ)(SFMG x,x=0,0.1,0.2,0.3,0.4)阴极材料,研究了Ga掺杂对材料晶体结构、电导率和电化学性能的影响。实验结果表明,Ga掺杂导致SFM晶格收缩,有效提高了电导率,掺杂后,氧空位浓度显著增加,导致氧还原反应催化活性增强。所有样品中SFMG0.3的极化阻抗值最小,在600℃时为0.624Ωcm^(2),比SFM减小了80.57%,表现出最佳电化学性能。以上结果表明,在SFM中掺杂Ga可以显著提高其电化学性能。
In this study,B-site Ga-doped Sr_(2)Fe_(1.5)Mo_(0.5-x) Ga_(x) O_(6-δ)(SFMG x,x=0,0.1,0.2,0.3,0.4)cathode materials are synthesized by the citric acid~glycine combustion method.The effects of Ga-doping on the crystal structure,electrical conductivity,and electrochemical performance are investigated.The doping of Ga into the SFM leads to lattice shrinkage and increases conductivity in air.Additionally,the introduction of Ga increases the oxygen vacancy concentration,leading to high catalytic activity for oxygen reduction reaction.For all the samples,SFMG0.3 exhibits the best electrochemical performance with the lowest polarization resistance of 0.624Ωcm^(2) at 600℃in air,reduced by 80.57%compared with the SFM cathode.All of these results indicate that the Ga-doping of SFM can substantially improve the electrochemical performance.
作者
张岩丽
赵佳乐
曾思梦
林福华
王波
ZHANG Yanli;ZHAO Jiale;ZENG Simeng;LIN Fuhua;WANG Bo(School of Chemical Engineering and Technology,Taiyuan University of Science and Technology,Taiyuan 030024,China;School of Traffic Engineering,Shanxi Vocational University of Engineering Science and Technology,Jinzhong 030619,China)
出处
《功能材料》
CAS
CSCD
北大核心
2024年第11期11107-11114,共8页
Journal of Functional Materials
基金
山西省基础研究计划(自由探索类)青年科学研究项目(202203021212297)
来晋工作优秀博士奖励资金(20222059)
太原科技大学科研启动基金(20212065)。
